Andrea Redaelli

TL;DR: A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs.

TL;DR: The threshold switching mechanism in amorphous chalcogenides has been investigated in this article, showing experimental data that once and for all demonstrate its electronic nature and the physical mechanisms responsible for the switching to the highly conductive state are discussed and the impact of cumulative read-out pulses is also investigated, showing that phase-change transitions induced by usual reading operations in phase change memory cells are completely negligible.

TL;DR: In this paper, the chalcogenide phase-change mechanism and phase distribution in the programmed cell is studied by both experiments and a numerical model, which self-consistently addresses the electrical-thermal conduction phase transition.

TL;DR: In this article, a comprehensive numerical model for chalcogenide glasses is presented, coupling a physically based electrical model able to reproduce the threshold switching with a local nucleation and growth algorithm to account for the phase transition dynamics.

TL;DR: A general procedure to find the optimum-cell geometry is proposed and applied to a prototype vertical cell, and the evolution of program and read performances through technology nodes is analyzed by numerical simulations with the aid of an analytical model.