Journal ArticleDOI
Reliability study of phase-change nonvolatile memories
Agostino Pirovano,Andrea Redaelli,Fabio Pellizzer,F. Ottogalli,Marina Tosi,Daniele Ielmini,Andrea L. Lacaita,Roberto Bez +7 more
TLDR
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs.Abstract:
A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110/spl deg/C and that a resistance difference of two order of magnitude between the cell states can be maintained for more than 10/sup 11/ programming cycles. The main mechanisms responsible for instabilities just before failure as well as for final device breakdown are also discussed. Finally, the impact of read and program disturbs are clearly assessed, showing with experimental data and simulated results that the crystallization induced during the cell read out and the thermal cross-talk due to adjacent bits programming do not affect the retention capabilities of the PCM cells.read more
Citations
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Journal ArticleDOI
Phase-change random access memory: a scalable technology
Simone Raoux,Geoffrey W. Burr,Matthew J. Breitwisch,Charles T. Rettner,Y.-C. Chen,Robert M. Shelby,Martin Salinga,Daniel Krebs,Shih-Hung Chen,H.L. Lung,Chung H. Lam +10 more
TL;DR: This work discusses the critical aspects that may affect the scaling of PCRAM, including materials properties, power consumption during programming and read operations, thermal cross-talk between memory cells, and failure mechanisms, and discusses experiments that directly address the scaling properties of the phase-change materials themselves.
Journal ArticleDOI
Phase change memory technology
Geoffrey W. Burr,Matthew J. Breitwisch,Michele M. Franceschini,Davide Garetto,Kailash Gopalakrishnan,Bryan L. Jackson,B. N. Kurdi,Chung H. Lam,Luis A. Lastras,Alvaro Padilla,Bipin Rajendran,Simone Raoux,Rohit S. Shenoy +12 more
TL;DR: In this article, the authors survey the current state of phase change memory (PCM), a nonvolatile solid-state memory technology built around the large electrical contrast between the highly resistive amorphous and highly conductive crystalline states in so-called phase change materials.
Proceedings ArticleDOI
Reliability investigations for manufacturable high density PRAM
Kinarn Kim,Su Jin Ahn +1 more
TL;DR: The reliability issues for high-density commercial memory products such as disturbance immunity, endurance, and data retention are addressed and evaluated by using a 64 Mb PRAM with 0.12 /spl mu/m technology.
Journal ArticleDOI
Phase change memories: State-of-the-art, challenges and perspectives
TL;DR: The paper reviews the physics underlying PCM operation, the scaling potentials of these devices and some options recently proposed for the cell structure and addresses the main challenges for the PCM to become fully competitive with standard Flash technology.
Operating system support for NVM+DRAM hybrid main memory
TL;DR: Preliminary experiments suggesting that this approach to building main memory as a hybrid between DRAM and non-volatile memory, such as flash or PC-RAM, is viable are described.
References
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Current status of the phase change memory and its future
TL;DR: The scaling projection shows that there is no physical limit to scaling down to the 22 nm node, with a number of technical challenges being identified.
Proceedings ArticleDOI
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
TL;DR: The development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node is discussed.
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The mechanism of threshold switching in amorphous alloys
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Proceedings ArticleDOI
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Fabio Pellizzer,Agostino Pirovano,F. Ottogalli,M. Magistretti,M. Scaravaggi,Paola Zuliani,Marina Tosi,A. Benvenuti,P. Besana,S. Cadeo,T. Marangon,R. Morandi,R. Piva,A. Spandre,R. Zonca,Alberto Modelli,Enrico Varesi,Tyler Lowrey,A. Lacaita,Giulio Casagrande,Paolo Cappelletti,Roberto Bez +21 more
TL;DR: In this paper, a novel cell structure for chalcogenide-based nonvolatile phase-change memories is presented, which is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance.
Proceedings ArticleDOI
Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
M. Gill,T. Lowrey,J. Park +2 more
TL;DR: The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed.