F
Fabio Pellizzer
Researcher at Micron Technology
Publications - 191
Citations - 6866
Fabio Pellizzer is an academic researcher from Micron Technology. The author has contributed to research in topics: Phase-change memory & Memory cell. The author has an hindex of 40, co-authored 191 publications receiving 6684 citations. Previous affiliations of Fabio Pellizzer include Numonyx & STMicroelectronics.
Papers
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Journal ArticleDOI
Electronic switching in phase-change memories
TL;DR: In this article, a detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented, and a physical picture of the switching mechanism is proposed.
Proceedings ArticleDOI
Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications
Fabio Pellizzer,Agostino Pirovano,F. Ottogalli,M. Magistretti,M. Scaravaggi,Paola Zuliani,Marina Tosi,A. Benvenuti,P. Besana,S. Cadeo,T. Marangon,R. Morandi,R. Piva,A. Spandre,R. Zonca,Alberto Modelli,Enrico Varesi,Tyler Lowrey,A. Lacaita,Giulio Casagrande,Paolo Cappelletti,Roberto Bez +21 more
TL;DR: In this paper, a novel cell structure for chalcogenide-based nonvolatile phase-change memories is presented, which is fully compatible with an advanced CMOS technology, is highly manufacturable and allows to optimize array density and cell performance.
Journal ArticleDOI
Reliability study of phase-change nonvolatile memories
Agostino Pirovano,Andrea Redaelli,Fabio Pellizzer,F. Ottogalli,Marina Tosi,Daniele Ielmini,Andrea L. Lacaita,Roberto Bez +7 more
TL;DR: A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs.
Journal ArticleDOI
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage
Ferdinando Bedeschi,Rich E. Fackenthal,Claudio Resta,Enzo Donze,Meenatchi Jagasivamani,E. Buda,Fabio Pellizzer,David W. Chow,Alessandro Cabrini,Giacomo Matteo Angelo Calvi,R. Faravelli,Andrea Fantini,Guido Torelli,Duane R. Mills,Roberto Gastaldi,Giulio Casagrande +15 more
TL;DR: In this paper, a phase-change Ge2-Sb2-TeB alloy based nonvolatile memory based on a /xtrench architecture is presented, with bipolar memory cells.
Journal ArticleDOI
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
TL;DR: In this paper, a detailed investigation of the time evolution for the low-field resistance R/sub off/ and the threshold voltage V/sub th/ in chalcogenide-based phase-change memory devices is presented.