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Changlong Sun
Researcher at Beijing University of Posts and Telecommunications
Publications - 5
Citations - 888
Changlong Sun is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Band gap & Molecular beam epitaxy. The author has an hindex of 4, co-authored 5 publications receiving 697 citations.
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Journal ArticleDOI
Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
Journal ArticleDOI
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
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Effects of dopant concentration on structural and near-infrared luminescence of Nd3+-doped beta-Ga2O3 thin films
Zhenping Wu,Gongxun Bai,Qingrong Hu,Daoyou Guo,Changlong Sun,Liyuan Ji,Ming Lei,Linghong Li,Peigang Li,Peigang Li,Jianhua Hao,Weihua Tang +11 more
TL;DR: In this paper, structural and near-infrared (NIR) luminescence of Nd3+-doped β-Ga2O3 thin films with different doping concentrations was investigated.
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Room temperature ferromagnetism in (Ga1−xMnx)2O3 epitaxial thin films
Daoyou Guo,Zhenping Wu,Y. H. An,Xiaojiang Li,Xuncai Guo,Xulong Chu,Changlong Sun,Ming Lei,Linghong Li,Lixin Cao,Peigang Li,Peigang Li,Weihua Tang +12 more
TL;DR: In this paper, Mn-doped monoclinic β-(Ga 1−xMnx)2O3 thin films were epitaxially grown on α-Al 2O3 (0001) substrates by alternately depositing Ga2O 3 and Mn layers using the laser molecular beam epitaxy technique.
Room temperature ferromagnetism in (Ga 1 x Mn x ) 2 O 3 epitaxial thin films
TL;DR: In this paper, a promising candidate for use in spintronic devices that are capable of working at room temperature has been presented, where the crystallattice expands and the energy band gap shrinks with the increase of Mn content for Mn ions incorporated into the Ga site.