P
Peigang Li
Researcher at Beijing University of Posts and Telecommunications
Publications - 166
Citations - 6660
Peigang Li is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Photodetector & Thin film. The author has an hindex of 32, co-authored 143 publications receiving 4260 citations. Previous affiliations of Peigang Li include Chinese Academy of Sciences & Zhejiang Sci-Tech University.
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Strong, Conductive, Lightweight, Neat Graphene Aerogel Fibers with Aligned Pores
TL;DR: The strong mechanical strength, high porosity, and fine electrical conductivity enable this novel material of ordered graphene aerogels to be greatly useful in versatile catalysts, supercapacitors, flexible batteries and cells, lightweight conductive fibers, and functional textiles.
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Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
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Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
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Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.
Daoyou Guo,Yuanli Su,Haoze Shi,Peigang Li,Nie Zhao,Junhao Ye,Shunli Wang,Aiping Liu,Zhengwei Chen,Chaorong Li,Weihua Tang +10 more
TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
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Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction
Daoyou Guo,Daoyou Guo,Han Liu,Peigang Li,Peigang Li,Zhenping Wu,Shunli Wang,Can Cui,Chaorong Li,Weihua Tang,Weihua Tang +10 more
TL;DR: The results strongly suggest that a photodetector based on β-Ga2O3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.