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Y. H. An
Researcher at Beijing University of Posts and Telecommunications
Publications - 34
Citations - 1686
Y. H. An is an academic researcher from Beijing University of Posts and Telecommunications. The author has contributed to research in topics: Thin film & Molecular beam epitaxy. The author has an hindex of 16, co-authored 32 publications receiving 1305 citations. Previous affiliations of Y. H. An include Zhejiang Sci-Tech University.
Papers
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Journal ArticleDOI
Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
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Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
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β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity
Xuncai Guo,N.H. Hao,Daoyou Guo,Zhenping Wu,Y. H. An,Xulong Chu,Linghong Li,Peigang Li,Ming Lei,Weihua Tang +9 more
TL;DR: In this article, β -Ga 2 O 3 /Si p-n heterojunctions are formed as a deep ultraviolet (UV) solar-blind photodetector, and the corresponding external quantum efficiency is over 1.8 × 10 5 %.
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Epitaxial growth and solar-blind photoelectric properties of corundum-structured α-Ga2O3 thin films
Daoyou Guo,Xiaolong Zhao,Yusong Zhi,Wei Cui,Yuanqi Huang,Y. H. An,Peigang Li,Peigang Li,Zhenping Wu,Weihua Tang +9 more
TL;DR: In this article, a (300)-oriented α-Ga 2 O 3 epitaxial thin film was obtained under the appropriate growth parameters and showed a band gap of 5.15 eV, which is larger than that of β-Ga O 3, exhibiting an excellent solar blind ultraviolet (UV) characteristic.
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Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes
TL;DR: In this paper, the top electrodes from Au/Ti to single-layer graphene were replaced with transparent electrodes, which not only allowed the majority of the incident light to reach the contact area but also offered an easy carrier transport channel when the electron-holes were separated.