L
Linghong Li
Researcher at State University of New York at Potsdam
Publications - 32
Citations - 2009
Linghong Li is an academic researcher from State University of New York at Potsdam. The author has contributed to research in topics: Thin film & Molecular beam epitaxy. The author has an hindex of 21, co-authored 32 publications receiving 1578 citations.
Papers
More filters
Journal ArticleDOI
Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TL;DR: In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.
Journal ArticleDOI
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
Journal ArticleDOI
β-Ga2O3/p-Si heterojunction solar-blind ultraviolet photodetector with enhanced photoelectric responsivity
Xuncai Guo,N.H. Hao,Daoyou Guo,Zhenping Wu,Y. H. An,Xulong Chu,Linghong Li,Peigang Li,Ming Lei,Weihua Tang +9 more
TL;DR: In this article, β -Ga 2 O 3 /Si p-n heterojunctions are formed as a deep ultraviolet (UV) solar-blind photodetector, and the corresponding external quantum efficiency is over 1.8 × 10 5 %.
Journal ArticleDOI
A self-powered deep-ultraviolet photodetector based on an epitaxial Ga2O3/Ga:ZnO heterojunction
TL;DR: In this paper, a lattice compatible semiconductor Ga:ZnO, a high quality β-Ga2O3/Ga: ZnO heterojunction based deep-ultraviolet photodetector (DUV PD) was achieved using laser molecular beam epitaxy.
Journal ArticleDOI
Enhanced Ga2O3/SiC ultraviolet photodetector with graphene top electrodes
TL;DR: In this paper, the top electrodes from Au/Ti to single-layer graphene were replaced with transparent electrodes, which not only allowed the majority of the incident light to reach the contact area but also offered an easy carrier transport channel when the electron-holes were separated.