Fabrication of β-Ga_2O_3 thin films and solar-blind photodetectors by laser MBE technology
Daoyou Guo,Zhenping Wu,Peigang Li,Y. H. An,Han Liu,Xuncai Guo,Hui Yan,G. F. Wang,Changlong Sun,Linghong Li,Weihua Tang +10 more
TLDR
In this article, a laser molecular beam epitaxy technology was employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates.Abstract:
Laser molecular beam epitaxy technology has been employed to deposit β-gallium oxide (β-Ga2O3) on (0001) sapphire substrates. After optimizing the growth parameters, (2¯01)-oriented β-Ga2O3 thin film was obtained. Ultraviolet-visible absorption spectrum demonstrates that the prepared β-Ga2O3 thin film shows excellent solar-blind ultraviolet (UV) characteristic with a band gap of 5.02 eV. A prototype photodetector device with a metal-semiconductor-metal structure has been fabricated using high quality β-Ga2O3 film. The device exhibits obvious photoresponse under 254 nm UV light irradiation, suggesting a potential application in solar-blind photodetectors.read more
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A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors
Daoyou Guo,Zhenping Wu,Y. H. An,Xuncai Guo,Xulong Chu,Changlong Sun,Linghong Li,Peigang Li,Peigang Li,Weihua Tang +9 more
TL;DR: In this paper, metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately, where the Schottky barrier controlled electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.
Journal ArticleDOI
Self-Powered Ultraviolet Photodetector with Superhigh Photoresponsivity (3.05 A/W) Based on the GaN/Sn:Ga2O3 pn Junction.
Daoyou Guo,Yuanli Su,Haoze Shi,Peigang Li,Nie Zhao,Junhao Ye,Shunli Wang,Aiping Liu,Zhengwei Chen,Chaorong Li,Weihua Tang +10 more
TL;DR: This study generates a super-high-performance self-powered UV photodetector based on a GaN/Sn:Ga2O3 pn junction that has a high UV/visible rejection ratio, and a fast photoresponse time of 18 ms without bias.
Journal ArticleDOI
Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction
Xing Chen,Kewei Liu,Zhenzhong Zhang,Chunrui Wang,Binghui Li,Haifeng Zhao,Dongxu Zhao,Dezhen Shen +7 more
TL;DR: A Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process and exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm, which is much quicker than any other previously reported β-Ga 2O3-based photodetectors.
Journal ArticleDOI
Recent Progress in Solar-Blind Deep-Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors
Chao Xie,Xing-Tong Lu,Xiao-Wei Tong,Zhi-Xiang Zhang,Feng-Xia Liang,Lin Liang,Lin-Bao Luo,Yucheng Wu +7 more
TL;DR: In this article, a comprehensive review of the applications of inorganic ultrawide-bandgap (UWBG) semiconductors for solar-blind DUV light detection in the past several decades is presented.
References
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Journal ArticleDOI
Domain epitaxy: A unified paradigm for thin film growth
Jagdish Narayan,B. C. Larson +1 more
TL;DR: In this paper, a unified model for thin film epitaxy where single crystal films with small and large lattice misfits are grown by domain matching epitaxy (DME) is presented.
Journal ArticleDOI
Ga2O3 thin film growth on c-plane sapphire substrates by molecular beam epitaxy for deep-ultraviolet photodetectors
TL;DR: In this paper, a β-Ga2O3 thin film was grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy, which exhibited a sharp absorption edge at around 5.0 eV, which is in the deep-ultraviolet region.
Journal ArticleDOI
Sol-gel prepared β-Ga2O3 thin films for ultraviolet photodetectors
TL;DR: In this article, a planar geometry photoconductive detector based on the sol-gel prepared β-Ga2O3 thin films has been fabricated for the wavelengths shorter than 270nm, which correspond to the solar-blind region.
Journal ArticleDOI
Vertical Solar-Blind Deep-Ultraviolet Schottky Photodetectors Based on β-Ga2O3 Substrates
TL;DR: In this article, a vertical-type Schottky photodetector based on a (100)-oriented β-Ga2O3 substrate has been fabricated with simple processes of thermal annealing and vacuum evaporation.
Journal ArticleDOI
Efficient Assembly of Bridged β-Ga2O3 Nanowires for Solar-Blind Photodetection
Yanbo Li,Takero Tokizono,Meiyong Liao,Miao Zhong,Yasuo Koide,Ichiro Yamada,Jean-Jacques Delaunay +6 more
TL;DR: In this paper, a bridged β-Ga 2 O 3 nanowire-based photodetector was used for solar-blind photodeter detection, which has a high 250-to-280-nm rejection ratio, low photocurrent noise, and fast decay time.