H
Hideki Takeuchi
Researcher at University of California, Berkeley
Publications - 119
Citations - 5149
Hideki Takeuchi is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 27, co-authored 117 publications receiving 4908 citations. Previous affiliations of Hideki Takeuchi include Hitachi & University of California.
Papers
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Journal ArticleDOI
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Digh Hisamoto,Wen-Chin Lee,J. Kedzierski,Hideki Takeuchi,K. Asano,C. Kuo,Erik H. Anderson,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +9 more
TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
Proceedings ArticleDOI
Sub 50-nm FinFET: PMOS
Xuejue Huang,Wen-Chin Lee,C. Kuo,D. Hisamoto,Leland Chang,J. Kedzierski,E. Anderson,Hideki Takeuchi,Yang-Kyu Choi,K. Asano,Vivek Subramanian,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +13 more
TL;DR: In this article, a self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short channel effect, and a 45 nm gate-length PMOS FinEET is presented.
Journal ArticleDOI
Sub-50 nm P-channel FinFET
Xuejue Huang,Wen-Chin Lee,C. Kuo,Digh Hisamoto,Leland Chang,J. Kedzierski,Erik H. Anderson,Hideki Takeuchi,Yang-Kyu Choi,K. Asano,Vivek Subramanian,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +13 more
TL;DR: In this article, a self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects, which shows good performance down to a gate-length of 18 nm.
Proceedings ArticleDOI
A folded-channel MOSFET for deep-sub-tenth micron era
Digh Hisamoto,Wen-Chin Lee,J. Kedzierski,E. Anderson,Hideki Takeuchi,K. Asano,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +8 more
TL;DR: In this paper, a quasi-planar fold-channel transistor structure was proposed for the vertical double-gate SOI MOSFETs, which improved the short channel effect immunities.
Journal ArticleDOI
Observation of bulk HfO2 defects by spectroscopic ellipsometry
TL;DR: In this paper, the authors used spectroscopic ellipsometry to investigate the oxidation of pure Hf films on silicon for the formation of HfO2 (hafnium oxide) gate-dielectric films in advanced complementary metaloxide-semiconductor field effect transistors.