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Qi-Kun Xue
Researcher at Tsinghua University
Publications - 618
Citations - 35623
Qi-Kun Xue is an academic researcher from Tsinghua University. The author has contributed to research in topics: Scanning tunneling microscope & Topological insulator. The author has an hindex of 84, co-authored 589 publications receiving 30908 citations. Previous affiliations of Qi-Kun Xue include Nanjing University of Information Science and Technology & Chinese Academy of Sciences.
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Journal ArticleDOI
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Cui-Zu Chang,Cui-Zu Chang,Jinsong Zhang,Xiao Feng,Xiao Feng,Jie Shen,Zuocheng Zhang,Minghua Guo,Kang Li,Yunbo Ou,Pang Wei,Lili Wang,Zhong Qing Ji,Yang Feng,Shuai-Hua Ji,Xi Chen,Jin-Feng Jia,Xi Dai,Zhong Fang,Shou-Cheng Zhang,Ke He,Yayu Wang,Li Lu,Xucun Ma,Qi-Kun Xue +24 more
TL;DR: The observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator shows a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state.
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Crossover of the three-dimensional topological insulator Bi 2 Se 3 to the two-dimensional limit
Yi Zhang,Ke He,Cui-Zu Chang,Cui-Zu Chang,Can-Li Song,Lili Wang,Xi Chen,Jin-Feng Jia,Zhong Fang,Xi Dai,Wen-Yu Shan,Shun-Qing Shen,Qian Niu,Xiao-Liang Qi,Shou-Cheng Zhang,Xucun Ma,Qi-Kun Xue +16 more
TL;DR: In this article, a study of the topological insulating Bi2Se3 thin films finds that a gap in these gapless surface states opens up in films below a certain thickness, which suggests that in thicker films, gapless states exist on both upper and lower surfaces.
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Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3
Qingyan Wang,Qingyan Wang,Zhi Li,Wenhao Zhang,Zuocheng Zhang,Jinsong Zhang,Wei Li,Hao Ding,Yunbo Ou,Peng Deng,Kai Chang,Jing Wen,Can-Li Song,Ke He,Jin-Feng Jia,Shuai-Hua Ji,Yayu Wang,Lili Wang,Xi Chen,Xucun Ma,Qi-Kun Xue +20 more
TL;DR: In this paper, the authors reported high transition temperature superconductivity in one unitcell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE).
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Superconductivity above 100 K in single-layer FeSe films on doped SrTiO3
Jian-Feng Ge,Zhi-Long Liu,Canhua Liu,Chun Lei Gao,Dong Qian,Qi-Kun Xue,Ying Liu,Jin-Feng Jia +7 more
TL;DR: FeSe/STO is confirmed as an ideal material for studying high-Tc superconductivity by means of in situ four-point probe electrical transport measurements, and rekindle the long-standing idea that electron pairing at interfaces between two different materials can be tailored to achieve high-temperaturesuperconductivity.
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Toward N-Doped Graphene via Solvothermal Synthesis
Dehui Deng,Xiulian Pan,Liang Yu,Yi Cui,Yeping Jiang,Jing Qi,Wei-Xue Li,Qiang Fu,Xucun Ma,Qi-Kun Xue,Gongquan Sun,Xinhe Bao +11 more
TL;DR: In this paper, a method for one-pot direct synthesis of N-doped graphene via the reaction of tetrachloromethane with lithium nitride under mild conditions, which renders fabrication in gram scale.