Z
Zuocheng Zhang
Researcher at Tsinghua University
Publications - 50
Citations - 7686
Zuocheng Zhang is an academic researcher from Tsinghua University. The author has contributed to research in topics: Topological insulator & Surface states. The author has an hindex of 21, co-authored 41 publications receiving 6236 citations. Previous affiliations of Zuocheng Zhang include Los Alamos National Laboratory & Fudan University.
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Journal ArticleDOI
Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
Cui-Zu Chang,Cui-Zu Chang,Jinsong Zhang,Xiao Feng,Xiao Feng,Jie Shen,Zuocheng Zhang,Minghua Guo,Kang Li,Yunbo Ou,Pang Wei,Lili Wang,Zhong Qing Ji,Yang Feng,Shuai-Hua Ji,Xi Chen,Jin-Feng Jia,Xi Dai,Zhong Fang,Shou-Cheng Zhang,Ke He,Yayu Wang,Li Lu,Xucun Ma,Qi-Kun Xue +24 more
TL;DR: The observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator shows a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state.
Journal ArticleDOI
Interface-Induced High-Temperature Superconductivity in Single Unit-Cell FeSe Films on SrTiO3
Qingyan Wang,Qingyan Wang,Zhi Li,Wenhao Zhang,Zuocheng Zhang,Jinsong Zhang,Wei Li,Hao Ding,Yunbo Ou,Peng Deng,Kai Chang,Jing Wen,Can-Li Song,Ke He,Jin-Feng Jia,Shuai-Hua Ji,Yayu Wang,Lili Wang,Xi Chen,Xucun Ma,Qi-Kun Xue +20 more
TL;DR: In this paper, the authors reported high transition temperature superconductivity in one unitcell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE).
Journal ArticleDOI
Direct observation of the layer-dependent electronic structure in phosphorene
Likai Li,Jonghwan Kim,Chenhao Jin,Guo Jun Ye,Diana Y. Qiu,Diana Y. Qiu,Felipe H. da Jornada,Felipe H. da Jornada,Zhiwen Shi,Long Chen,Zuocheng Zhang,Fangyuan Yang,Kenji Watanabe,Takashi Taniguchi,Wencai Ren,Steven G. Louie,Steven G. Louie,Xianhui Chen,Yuanbo Zhang,Feng Wang,Feng Wang +20 more
TL;DR: It is experimentally demonstrated that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions, and the interband optical transitions cover a wide, technologically important spectral range.
Journal ArticleDOI
Band structure engineering in (Bi 1− x Sb x ) 2 Te 3 ternary topological insulators
Jinsong Zhang,Cui-Zu Chang,Cui-Zu Chang,Zuocheng Zhang,Jing Wen,Xiao Feng,Kang Li,Minhao Liu,Ke He,Lili Wang,Xi Chen,Qi-Kun Xue,Qi-Kun Xue,Xucun Ma,Yayu Wang +14 more
TL;DR: This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.
Journal ArticleDOI
Quantum Hall effect in black phosphorus two-dimensional electron system
Likai Li,Fangyuan Yang,Guo Jun Ye,Zuocheng Zhang,Zengwei Zhu,Wenkai Lou,Wenkai Lou,Xiaoying Zhou,Xiaoying Zhou,Liang Li,Kenji Watanabe,Takashi Taniguchi,Kai Chang,Kai Chang,Yayu Wang,Xianhui Chen,Yuanbo Zhang +16 more
TL;DR: The observation of the integer quantum Hall effect in a high-quality black phosphorus 2DES is reported, and important information on the energetics of the spin-split Landau levels in black phosphorus is gained.