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Xiao Feng

Researcher at Tsinghua University

Publications -  53
Citations -  5655

Xiao Feng is an academic researcher from Tsinghua University. The author has contributed to research in topics: Topological insulator & Thin film. The author has an hindex of 19, co-authored 45 publications receiving 4476 citations. Previous affiliations of Xiao Feng include Chinese Academy of Sciences.

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Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

TL;DR: The observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)2Te3, a magnetic topological insulator shows a plateau in the Hall resistance as a function of the gating voltage without any applied magnetic fields, signifying the achievement of the QAH state.
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Band structure engineering in (Bi 1− x Sb x ) 2 Te 3 ternary topological insulators

TL;DR: This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.
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Experimental Realization of an Intrinsic Magnetic Topological Insulator

TL;DR: In this paper, the experimental realization of thin films of an intrinsic magnetic topological insulator, MnBi 2 Te 4, by alternate growth of a Bi 2 Te 3 quintuple layer and a MnTe bilayer with molecular beam epitaxy was reported.
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Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator

TL;DR: This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.
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Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order

TL;DR: Thin films of magnetically doped topological insulators are found to possess carrier-independent long-range ferromagnetic order with perpendicular magnetic anisotropy, demonstrating this material as a promising system to realize the quantized anomalous Hall effect.