Jing Wen

TL;DR: In this paper, the authors reported high transition temperature superconductivity in one unitcell (UC) thick FeSe films grown on a Se-etched SrTiO3 (001) substrate by molecular beam epitaxy (MBE).

TL;DR: This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.

TL;DR: Topological insulator thin films of Bi2Te3 with controlled electronic structure can be grown by regulating the molecular beam epitaxy growth kinetics without any extrinsic doping, a step toward controlling topological surface states.

TL;DR: Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), this article showed that moderately thick Sb2Te3 films grown layer-by-layer by molecular beam epitaxy on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating.

TL;DR: In this paper, the Raman spectra of topological insulator Bi2Te 3 films prepared by molecular beam epitaxy (MBE) have been measured by an in situ ultrahigh vacuum (UHV)-MBE-Raman spectroscopy system.