Journal ArticleDOI
Fabrication and evaluation for extremely thin Si wafer
Libo Zhou,Bahman Soltani Hosseini,Tatsuya Tsuruga,Jun Shimizu,Hiroshi Eda,Sumio Kamiya,Hisao Iwase,Yoshiaki Tashiro +7 more
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TLDR
In this paper, a new index for evaluation of the degree of subsurface damage (DSD) was proposed, which is easily calculated via the external geometry of the ground wafer.Abstract:
Grinding process on the Si wafer develops subsurface damage, which remarkably degrades deflective strength of the wafer and constitutes a barrier against producing a thin wafer for low-profile packaging. In this paper, the authors propose a new index for evaluation of the Degree of Subsurface Damage (DSD). Requiring no costly instrument, the new index is easily calculated via the external geometry of the ground wafer. With the new index, it is able to quantitatively evaluate the subsurface damage introduced by different processes (or wheel) and to estimate the minimally achievable thickness of the wafer by each process. Also, a novel fixed abrasive process of Chemo-Mechanical Grinding (CMG) has been proposed for stress relief. All results indicate that the subsurface damage after CMG is nearly zero.read more
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Journal ArticleDOI
Warping of silicon wafers subjected to back-grinding process
TL;DR: Wang et al. as discussed by the authors investigated the warping of silicon wafers in ultra-precision grinding-based back-thinning process and established a mathematical model to describe wafer warping during the thinning process using the elasticity theory.
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A study on the diamond grinding of ultra-thin silicon wafers
TL;DR: In this article, diamond grinding for thinning silicon wafers was carried out on an ultra-precision grinding machine and the relationship between the subsurface damage of the ground wafer and the minimum wafer thickness achieved was also revealed.
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Edge chipping of silicon wafers in diamond grinding
TL;DR: In this paper, the authors investigated edge chipping of silicon wafer in diamond grinding and found that the crystallographic orientation and thickness of the wafer can be correlated with the edge chippings.
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Elimination of surface scratch/texture on the surface of single crystal Si substrate in chemo-mechanical grinding (CMG) process
TL;DR: In this paper, a series of CMG experiments have been conducted to study the elimination process of artificial scratches created on etched Si surfaces and residual textures induced by SD1500 diamond wheel in CMG process.
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Finite element analysis of deflection and residual stress on machined ultra-thin silicon wafers
TL;DR: In this paper, a 2D axisymmetric finite element (FE) model was developed to predict the deflection and full-field residual stress of ground ultra-thin wafers.