International Journal of Electronics Letters 

About: International Journal of Electronics Letters is an academic journal published by Taylor & Francis. The journal publishes majorly in the area(s): Computer science & Engineering. It has an ISSN identifier of 2168-1724. Over the lifetime, 430 publications have been published receiving 1359 citations. The journal is also known as: IJEL.

Printed planar patch antennas based on metamaterial

Abstract: The article presents implementation of two antennas based on metamaterial (MTM) technology, standard printed planar patch manufacturing techniques and applying the proper capacitive and inductive c...

Adaptive double-threshold based energy detector for spectrum sensing in cognitive radio networks

Abstract: In cognitive radio networks, spectrum sensing is used to sense the unused spectrum in an opportunistic manner. In this paper, we propose an energy detector utilizing adaptive double threshold (ED_ADT) for spectrum sensing, which improves detection performance as well as overcomes sensing failure problem. The detection threshold is made adaptive to the fluctuation of the received signal power in each local detector of secondary user. Numerical results show that proposed ED_ADT scheme outperforms conventional energy detector by 12.8% at –8 dB signal-to-noise ratio (SNR) in terms of probability of detection alarm (P d). While utilizing cooperative spectrum sensing (CSS) with ED_ADT scheme, it is further found that adaptive double threshold improves detection performance around 26.8% and 7.6% as compared to CSS with single threshold and hierarchical with quantization method at –10 dB SNR, respectively, under the case when a small number of sensing nodes are used in spectrum sensing.

An efficient clocking scheme for quantum-dot cellular automata

Abstract: Fast pace growth in the IC industry is facing the challenges of feature size reduction which in turn demands an alternative to current CMOS VLSI. Quantum-dot cellular automata are emerging as one o...

High speed MDM-Ro-FSO communication system by incorporating AMI scheme

Abstract: Radio over Free Space Optics (Ro-FSO) is a promising technology to provide broadband services in rural areas as next-generation communication networks. This work is focused on adopting alte...

RF and analogue performance investigation of DG tunnel FET

Abstract: In this letter, the analogue and RF performance of a silicon double-gate tunnel FET (DGTFET) is reported. With the help of a device simulator, the variation of different analogue and RF device performance parameters are investigated, such as transconductance-to-drain-current ratio (gm/Id), intrinsic gain (gm/gds), cut-off frequency (fT), and maximum frequency of oscillation (fmax) as a function of channel length, are studied. Our results show that the reduction of channel length results in an improvement in the RF performance parameters of the device and deterioration of the analogue performance parameters of the device, clearly indicating a necessary design trade-off between the RF (bandwidth) and analogue performances (power efficiency). The investigation presented here exhibits a valuable result that the DGTFET devices with optimised gate length are suitable for low-power analogue and RF applications.