Jiaheng Li

TL;DR: In this paper, the authors predict that van der Waals layered MnBi$_2$Te$_4$-family materials show two-dimensional (2D) ferromagnetism in the single layer and three-dimensional(3D) $A$-type antiferromagnetic topological insulator in the bulk.

TL;DR: This work investigates the quantum transport of both bulk crystal and exfoliated MnBi 2 Te 4 flakes in a field-effect transistor geometry and observes a large longitudinal resistance and zero Hall plateau, which are characteristics of an axion insulator state.

TL;DR: In this article, the authors predict a series of van der Waals layered MnBi2Te4-related materials that show intralayer ferromagnetic and interlayer antiferromagnetic exchange interactions, including a topological axion state on the surface, a type II magnetic Weyl semimetal with one pair of Weyl points, as well as a collection of intrinsic axion insulators and quantum anomalous Hall (QAH) insulators in even and odd-layer films, respectively.

TL;DR: In this paper, the experimental realization of thin films of an intrinsic magnetic topological insulator, MnBi 2 Te 4, by alternate growth of a Bi 2 Te 3 quintuple layer and a MnTe bilayer with molecular beam epitaxy was reported.

TL;DR: The experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices is reported.