L
Lin Gu
Researcher at Chinese Academy of Sciences
Publications - 31
Citations - 976
Lin Gu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Ferromagnetism & Curie temperature. The author has an hindex of 10, co-authored 31 publications receiving 655 citations. Previous affiliations of Lin Gu include Tsinghua University.
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Journal ArticleDOI
Experimental Realization of an Intrinsic Magnetic Topological Insulator
Yan Gong,Jingwen Guo,Jiaheng Li,Kejing Zhu,Menghan Liao,Xiaozhi Liu,Qinghua Zhang,Lin Gu,Lin Tang,Xiao Feng,Ding Zhang,Wei Li,Can-Li Song,Lili Wang,Pu Yu,Xi Chen,Yayu Wang,Hong Yao,Wenhui Duan,Yong Xu,Yong Xu,Shou-Cheng Zhang,Xucun Ma,Qi-Kun Xue,Ke He +24 more
TL;DR: In this paper, the experimental realization of thin films of an intrinsic magnetic topological insulator, MnBi 2 Te 4, by alternate growth of a Bi 2 Te 3 quintuple layer and a MnTe bilayer with molecular beam epitaxy was reported.
Journal ArticleDOI
Disorder-induced multifractal superconductivity in monolayer niobium dichalcogenides
Kun Zhao,Haicheng Lin,Xiao Xiao,Wantong Huang,Wei Yao,Mingzhe Yan,Ying Xing,Qinghua Zhang,Zi-Xiang Li,Shintaro Hoshino,Jian Wang,Shuyun Zhou,Lin Gu,Mohammad Saeed Bahramy,Hong Yao,Naoto Nagaosa,Qi-Kun Xue,Kam Tuen Law,Xi Chen,Shuai-Hua Ji +19 more
TL;DR: In this paper, a well-controlled disorder effect in the recently discovered monolayer NbSe2 superconductor is reported, where the superconducting transition temperatures of NbSE2 monolayers are substantially increased by disorder.
Journal ArticleDOI
Experimental realization of an intrinsic magnetic topological insulator
Yan Gong,Jingwen Guo,Jiaheng Li,Kejing Zhu,Menghan Liao,Xiaozhi Liu,Qinghua Zhang,Lin Gu,Lin Tang,Xiao Feng,Ding Zhang,Wei Li,Can-Li Song,Lili Wang,Pu Yu,Xi Chen,Yayu Wang,Hong Yao,Wenhui Duan,Yong Xu,Yong Xu,Shou-Cheng Zhang,Xucun Ma,Qi-Kun Xue,Ke He +24 more
TL;DR: In this article, the experimental realization of high-quality thin films of an intrinsic magnetic topological insulator (TI) by alternate growth of a Bi$_2$Te$_3$ quintuple-layer and a MnTe bilayer with molecular beam epitaxy was reported.
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Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy
Fangsen Li,Qinghua Zhang,Chenjia Tang,Chong Liu,Jinan Shi,CaiNa Nie,Guanyu Zhou,Li Zheng,Wenhao Zhang,Can-Li Song,Ke He,Shuai-Hua Ji,Shengbai Zhang,Lin Gu,Lili Wang,Xucun Ma,Qi-Kun Xue +16 more
TL;DR: In this paper, the authors report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states.
Journal ArticleDOI
Arc‐Melting to Narrow the Bandgap of Oxide Semiconductors
TL;DR: Enhanced optical and electrical properties are found in the arc-melted oxide, such as enhanced photocatalytic properties of the arc -melted ZnO under visible light.