Example of IEEE Transactions on Device and Materials Reliability format
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Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format
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Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format Example of IEEE Transactions on Device and Materials Reliability format
Sample paper formatted on SciSpace - SciSpace
This content is only for preview purposes. The original open access content can be found here.
open access Open Access

IEEE Transactions on Device and Materials Reliability — Template for authors

Publisher: IEEE
Categories Rank Trend in last 3 yrs
Safety, Risk, Reliability and Quality #56 of 165 down down by 28 ranks
Electrical and Electronic Engineering #271 of 693 down down by 119 ranks
Electronic, Optical and Magnetic Materials #110 of 246 down down by 47 ranks
journal-quality-icon Journal quality:
Good
calendar-icon Last 4 years overview: 370 Published Papers | 1279 Citations
indexed-in-icon Indexed in: Scopus
last-updated-icon Last updated: 15/06/2020
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Related Journals

open access Open Access

IEEE

Quality:  
High
CiteRatio: 5.5
SJR: 0.81
SNIP: 1.008
open access Open Access
recommended Recommended

Springer

Quality:  
High
CiteRatio: 15.9
SJR: 3.473
SNIP: 2.052

Journal Performance & Insights

Impact Factor

CiteRatio

Determines the importance of a journal by taking a measure of frequency with which the average article in a journal has been cited in a particular year.

A measure of average citations received per peer-reviewed paper published in the journal.

1.407

11% from 2018

Impact factor for IEEE Transactions on Device and Materials Reliability from 2016 - 2019
Year Value
2019 1.407
2018 1.583
2017 1.512
2016 1.575
graph view Graph view
table view Table view

3.5

6% from 2019

CiteRatio for IEEE Transactions on Device and Materials Reliability from 2016 - 2020
Year Value
2020 3.5
2019 3.3
2018 2.9
2017 3.7
2016 3.5
graph view Graph view
table view Table view

insights Insights

  • Impact factor of this journal has decreased by 11% in last year.
  • This journal’s impact factor is in the top 10 percentile category.

insights Insights

  • CiteRatio of this journal has increased by 6% in last years.
  • This journal’s CiteRatio is in the top 10 percentile category.

SCImago Journal Rank (SJR)

Source Normalized Impact per Paper (SNIP)

Measures weighted citations received by the journal. Citation weighting depends on the categories and prestige of the citing journal.

Measures actual citations received relative to citations expected for the journal's category.

0.384

8% from 2019

SJR for IEEE Transactions on Device and Materials Reliability from 2016 - 2020
Year Value
2020 0.384
2019 0.416
2018 0.381
2017 0.44
2016 0.444
graph view Graph view
table view Table view

1.134

4% from 2019

SNIP for IEEE Transactions on Device and Materials Reliability from 2016 - 2020
Year Value
2020 1.134
2019 1.183
2018 1.06
2017 1.093
2016 1.273
graph view Graph view
table view Table view

insights Insights

  • SJR of this journal has decreased by 8% in last years.
  • This journal’s SJR is in the top 10 percentile category.

insights Insights

  • SNIP of this journal has decreased by 4% in last years.
  • This journal’s SNIP is in the top 10 percentile category.

IEEE Transactions on Device and Materials Reliability

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IEEE

IEEE Transactions on Device and Materials Reliability

Provides leading edge information that is critical to the creation of reliable electronic devices and materials, and a focus for interdisciplinary communication in the state of the art of reliability of electronic devices, and the materials used in their manufacture. It focuse...... Read More

Engineering

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Last updated on
15 Jun 2020
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ISSN
1530-4388
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Impact Factor
High - 1.7
i
Open Access
No
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Sherpa RoMEO Archiving Policy
Green faq
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Plagiarism Check
Available via Turnitin
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Endnote Style
Download Available
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Bibliography Name
IEEEtran
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Citation Type
Numbered
[25]
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Bibliography Example
C. W. J. Beenakker, “Specular andreev reflection in graphene,” Phys. Rev. Lett., vol. 97, no. 6, p.

Top papers written in this journal

Journal Article DOI: 10.1109/TDMR.2005.853449
Radiation-induced soft errors in advanced semiconductor technologies
Robert Baumann1

Abstract:

The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for sof... The once-ephemeral radiation-induced soft error has become a key threat to advanced commercial electronic components and systems. Left unchallenged, soft errors have the potential for inducing the highest failure rate of all other reliability mechanisms combined. This article briefly reviews the types of failure modes for soft errors, the three dominant radiation mechanisms responsible for creating soft errors in terrestrial applications, and how these soft errors are generated by the collection of radiation-induced charge. The soft error sensitivity as a function of technology scaling for various memory and logic components is then presented with a consideration of which applications are most likely to require soft error mitigation. read more read less

Topics:

Soft error (59%)59% related to the paper
View PDF
1,345 Citations
Journal Article DOI: 10.1109/TDMR.2008.923743
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

Abstract:

Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which... Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are reviewed. Data from three de-accelerated tests are presented, which demonstrate a close correlation between failure modes and bias point. Maximum degradation was found in "semi-on" conditions, close to the maximum of hot-electron generation which was detected with the aid of electroluminescence (EL) measurements. This suggests a contribution of hot-electron effects to device degradation, at least at moderate drain bias (VDS 30-50 V), new failure mechanisms are triggered, which induce an increase of gate leakage current. The latter is possibly related with the inverse piezoelectric effect leading to defect generation due to strain relaxation, and/or to localized permanent breakdown of the AlGaN barrier layer. Results are compared with literature data throughout the text. read more read less

Topics:

High-electron-mobility transistor (51%)51% related to the paper
548 Citations
Journal Article DOI: 10.1109/TDMR.2005.845236
Review on high-k dielectrics reliability issues

Abstract:

High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k ga... High-k gate dielectrics, particularly Hf-based materials, are likely to be implemented in CMOS advanced technologies. One of the important challenges in integrating these materials is to achieve lifetimes equal or better than their SiO/sub 2/ counterparts. In this paper we review the status of reliability studies of high-k gate dielectrics and try to illustrate it with experimental results. High-k materials show novel reliability phenomena related to the asymmetric gate band structure and the presence of fast and reversible charge. Reliability of high-k structures is influenced both by the interfacial layer as well as the high-k layer. One of the main issues is to understand these new mechanisms in order to asses the lifetime accurately and reduce them. read more read less

Topics:

High-κ dielectric (53%)53% related to the paper, Reliability (semiconductor) (52%)52% related to the paper
499 Citations
Journal Article DOI: 10.1109/TDMR.2004.836724
Reliability study of phase-change nonvolatile memories

Abstract:

A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyz... A detailed investigation of the reliability aspects in nonvolatile phase-change memories (PCM) is presented, covering the basic aspects related to high density array NVM, i.e., data retention, endurance, program and read disturbs. The data retention capabilities and the endurance characteristics of single PCM cells are analyzed, showing that data can be stored for 10 years at 110/spl deg/C and that a resistance difference of two order of magnitude between the cell states can be maintained for more than 10/sup 11/ programming cycles. The main mechanisms responsible for instabilities just before failure as well as for final device breakdown are also discussed. Finally, the impact of read and program disturbs are clearly assessed, showing with experimental data and simulated results that the crystallization induced during the cell read out and the thermal cross-talk due to adjacent bits programming do not affect the retention capabilities of the PCM cells. read more read less

Topics:

Data retention (50%)50% related to the paper
409 Citations
Journal Article DOI: 10.1109/7298.946456
Soft errors in advanced semiconductor devices-part I: the three radiation sources
Robert Baumann1

Abstract:

In this review paper, we summarize the key distinguishing characteristics and sources of the three primary radiation mechanisms responsible for inducing soft errors in semiconductor devices and discuss methods useful for reducing the impact of the effects in final packaged parts. In this review paper, we summarize the key distinguishing characteristics and sources of the three primary radiation mechanisms responsible for inducing soft errors in semiconductor devices and discuss methods useful for reducing the impact of the effects in final packaged parts. read more read less
399 Citations
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IEEE Transactions on Device and Materials Reliability format uses IEEEtran citation style.

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Frequently asked questions

1. Can I write IEEE Transactions on Device and Materials Reliability in LaTeX?

Absolutely not! Our tool has been designed to help you focus on writing. You can write your entire paper as per the IEEE Transactions on Device and Materials Reliability guidelines and auto format it.

2. Do you follow the IEEE Transactions on Device and Materials Reliability guidelines?

Yes, the template is compliant with the IEEE Transactions on Device and Materials Reliability guidelines. Our experts at SciSpace ensure that. If there are any changes to the journal's guidelines, we'll change our algorithm accordingly.

3. Can I cite my article in multiple styles in IEEE Transactions on Device and Materials Reliability?

Of course! We support all the top citation styles, such as APA style, MLA style, Vancouver style, Harvard style, and Chicago style. For example, when you write your paper and hit autoformat, our system will automatically update your article as per the IEEE Transactions on Device and Materials Reliability citation style.

4. Can I use the IEEE Transactions on Device and Materials Reliability templates for free?

Sign up for our free trial, and you'll be able to use all our features for seven days. You'll see how helpful they are and how inexpensive they are compared to other options, Especially for IEEE Transactions on Device and Materials Reliability.

5. Can I use a manuscript in IEEE Transactions on Device and Materials Reliability that I have written in MS Word?

Yes. You can choose the right template, copy-paste the contents from the word document, and click on auto-format. Once you're done, you'll have a publish-ready paper IEEE Transactions on Device and Materials Reliability that you can download at the end.

6. How long does it usually take you to format my papers in IEEE Transactions on Device and Materials Reliability?

It only takes a matter of seconds to edit your manuscript. Besides that, our intuitive editor saves you from writing and formatting it in IEEE Transactions on Device and Materials Reliability.

7. Where can I find the template for the IEEE Transactions on Device and Materials Reliability?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per IEEE Transactions on Device and Materials Reliability's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

8. Can I reformat my paper to fit the IEEE Transactions on Device and Materials Reliability's guidelines?

Of course! You can do this using our intuitive editor. It's very easy. If you need help, our support team is always ready to assist you.

9. IEEE Transactions on Device and Materials Reliability an online tool or is there a desktop version?

SciSpace's IEEE Transactions on Device and Materials Reliability is currently available as an online tool. We're developing a desktop version, too. You can request (or upvote) any features that you think would be helpful for you and other researchers in the "feature request" section of your account once you've signed up with us.

10. I cannot find my template in your gallery. Can you create it for me like IEEE Transactions on Device and Materials Reliability?

Sure. You can request any template and we'll have it setup within a few days. You can find the request box in Journal Gallery on the right side bar under the heading, "Couldn't find the format you were looking for like IEEE Transactions on Device and Materials Reliability?”

11. What is the output that I would get after using IEEE Transactions on Device and Materials Reliability?

After writing your paper autoformatting in IEEE Transactions on Device and Materials Reliability, you can download it in multiple formats, viz., PDF, Docx, and LaTeX.

12. Is IEEE Transactions on Device and Materials Reliability's impact factor high enough that I should try publishing my article there?

To be honest, the answer is no. The impact factor is one of the many elements that determine the quality of a journal. Few of these factors include review board, rejection rates, frequency of inclusion in indexes, and Eigenfactor. You need to assess all these factors before you make your final call.

13. What is Sherpa RoMEO Archiving Policy for IEEE Transactions on Device and Materials Reliability?

SHERPA/RoMEO Database

We extracted this data from Sherpa Romeo to help researchers understand the access level of this journal in accordance with the Sherpa Romeo Archiving Policy for IEEE Transactions on Device and Materials Reliability. The table below indicates the level of access a journal has as per Sherpa Romeo's archiving policy.

RoMEO Colour Archiving policy
Green Can archive pre-print and post-print or publisher's version/PDF
Blue Can archive post-print (ie final draft post-refereeing) or publisher's version/PDF
Yellow Can archive pre-print (ie pre-refereeing)
White Archiving not formally supported
FYI:
  1. Pre-prints as being the version of the paper before peer review and
  2. Post-prints as being the version of the paper after peer-review, with revisions having been made.

14. What are the most common citation types In IEEE Transactions on Device and Materials Reliability?

The 5 most common citation types in order of usage for IEEE Transactions on Device and Materials Reliability are:.

S. No. Citation Style Type
1. Author Year
2. Numbered
3. Numbered (Superscripted)
4. Author Year (Cited Pages)
5. Footnote

15. How do I submit my article to the IEEE Transactions on Device and Materials Reliability?

It is possible to find the Word template for any journal on Google. However, why use a template when you can write your entire manuscript on SciSpace , auto format it as per IEEE Transactions on Device and Materials Reliability's guidelines and download the same in Word, PDF and LaTeX formats? Give us a try!.

16. Can I download IEEE Transactions on Device and Materials Reliability in Endnote format?

Yes, SciSpace provides this functionality. After signing up, you would need to import your existing references from Word or Bib file to SciSpace. Then SciSpace would allow you to download your references in IEEE Transactions on Device and Materials Reliability Endnote style according to Elsevier guidelines.

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I spent hours with MS word for reformatting. It was frustrating - plain and simple. With SciSpace, I can draft my manuscripts and once it is finished I can just submit. In case, I have to submit to another journal it is really just a button click instead of an afternoon of reformatting.

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